aoi31 standard cell family

 3-AND into 2-NOR gate
aoi31 symbol
4 cells with different drive strengths, each with a P/N ratio of about 2. The width of the N-transistor connected to pin b is designed to have a similar conductivity to the three series N-transistors in order to maintain a consistent output drive capability.
z:((a1*a2*a3)+b)' cell width power Generic 0.13um typical timing (ps & ps/fF), pin a3.
leakage dynamic tR=PropR+RampR×Load(fF), tF=PropF+RampF×Load(fF)
wsclib013 gates lambda 0.13um nW nW/MHz PinCap PropR RampR PropF RampF
aoi31v0x05 2.3  56 3.08  0.37   9.8  3.0f  72  7.35  56  5.22
aoi31v0x1 2.3  56 3.08  0.59  15.2  4.8f  68  4.36  56  3.26
aoi31v0x2 4.0  96 5.28 1.25  30.6  9.7f  67  2.11  51  1.46
aoi31v0x3 6.0 144 7.92 1.85  44.4 14.4f  65  1.40  50  0.97
aoi31v0x05
 
Effort
FO4 Log.
a1 /\ 2.21 2.28
¯_
a2 /\ 2.12 2.23
¯_
a3 /\ 2.01 2.21
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b /\ 1.42 1.54
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aoi31v0x05 schematic aoi31v0x05 standard cell layout
aoi31v0x1
 
Effort
FO4 Log.
a1 /\ 2.08 2.10
¯_
a2 /\ 2.04 2.15
¯_
a3 /\ 1.93 2.11
¯_
b /\ 1.43 1.53
¯_
aoi31v0x1 schematic aoi31v0x1 standard cell layout
aoi31v0x2
 
Effort
FO4 Log.
a1 /\ 2.11 2.20
¯_
a2 /\ 2.01 2.16
¯_
a3 /\ 1.83 2.01
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b /\ 1.33 1.43
¯_
aoi31v0x2 schematic aoi31v0x2 standard cell layout
aoi31v0x3
 
Effort
FO4 Log.
a1 /\ 2.02 2.04
¯_
a2 /\ 1.93 2.02
¯_
a3 /\ 1.80 1.99
¯_
b /\ 1.35 1.44
¯_
aoi31v0x3 schematic aoi31v0x3 standard cell layout
Web data book for the wsclib. Vdd=1.2V, T=27°C, nominal process, generic 0.13um technology.   Copyright © 2005-2008 Graham Petley.  11 JAN 2008