nd2 standard cell family
2-I/P NAND gate
Single stage 2-I/P NAND gates. 6 drive strengths with a P/N ratio of 2.
z:(a*b)'
cell width
power
Generic 0.13um typical timing (ps & ps/fF), pin b.
leakage
dynamic
tR=PropR+RampR×Load(fF), tF=PropF+RampF×Load(fF)
lambda
0.13um
nW
nW/MHz
PinCap
PropR
RampR
PropF
RampF
nd2v0x05
28
1.54
0.27
3.4
2.1f
46
7.42
35
5.27
nd2v0x1
28
1.54
0.46
5.4
3.4f
44
4.23
34
3.07
nd2v0x2
32
1.76
0.79
9.0
5.7f
44
2.47
35
1.83
nd2v0x4
50
2.75
1.57
17.3
11.0f
43
1.23
34
0.92
nd2v0x6
70
3.85
2.36
27.0
17.2f
44
0.82
35
0.61
nd2v0x8
90
4.95
3.14
35.6
22.9f
43
0.62
35
0.46
nd2v0x05
nd2v0x1
nd2v0x2
nd2v0x4
nd2v0x6
nd2v0x8