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nd3 standard cell family |
3-I/P NAND gate |
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The P/N ratio is set to 2.33, which is close to the P/N ratio of 2.29 which gives the fastest speed, as well as balanced rise and fall drive strengths. This means that the P:N transistors have the same size … r = KP·γ/KN = 1. |
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z:(a*b*c)' |
cell width |
power |
Generic 0.13um typical timing (ps & ps/fF), pin c. |
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leakage |
dynamic |
tR=PropR+RampR×Load(fF), tF=PropF+RampF×Load(fF) |
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lambda |
0.13um |
nW |
nW/MHz |
PinCap |
PropR |
RampR |
PropF |
RampF |
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| nd3v0x05 |
40 |
2.20 |
0.46 |
5.6 |
3.0f |
54 |
5.96 |
43 |
5.10 |
| nd3v0x1 |
40 |
2.20 |
0.92 |
9.8 |
5.4f |
50 |
2.98 |
40 |
2.55 |
| nd3v0x2 |
60 |
3.30 |
1.28 |
13.2 |
7.2f |
48 |
2.12 |
38 |
1.82 |
| nd3v0x3 |
70 |
3.85 |
1.85 |
18.5 |
10.2f |
48 |
1.48 |
38 |
1.27 |
| nd3v0x6 |
130 |
7.15 |
3.70 |
38.5 |
21.7f |
49 |
0.74 |
39 |
0.64 |
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