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oai211 standard cell family |
2-OR into 3-NAND gate |
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The P/N ratio is kept approx equal to 2. Series N-transistors are more conductive than series P-transistors, which explains the apparently larger P-transistors. The width of the P-transistors connected to pins b & c are designed to have a similar conductivity to the two series P-transistors, so that the output drive capability is consistent. |
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z:((a1+a2)*b*c)' |
cell width |
power |
Generic 0.13um typical timing (ps & ps/fF), pin a2. |
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leakage |
dynamic |
tR=PropR+RampR×Load(fF), tF=PropF+RampF×Load(fF) |
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lambda |
0.13um |
nW |
nW/MHz |
PinCap |
PropR |
RampR |
PropF |
RampF |
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| oai211v0x05 |
48 |
2.64 |
0.51 |
6.4 |
3.4f |
86 |
7.35 |
57 |
5.15 |
| oai211v0x1 |
52 |
2.86 |
0.86 |
10.4 |
5.7f |
83 |
4.34 |
54 |
3.02 |
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