oai211 standard cell family

2-OR into 3-NAND gate

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oai211 symbol

The P/N ratio is kept approx equal to 2. Series N-transistors are more conductive than series P-transistors, which explains the apparently larger P-transistors. The width of the P-transistors connected to pins b & c are designed to have a similar conductivity to the two series P-transistors, so that the output drive capability is consistent.

z:((a1+a2)*b*c)'

cell width

power

Generic 0.13um typical timing (ps & ps/fF), pin a2.

leakage

dynamic

tR=PropR+RampR×Load(fF), tF=PropF+RampF×Load(fF)

lambda

0.13um

nW

nW/MHz

PinCap

PropR

RampR

PropF

RampF

oai211v0x05

48

2.64

0.51

6.4

3.4f

86

7.35

57

5.15

oai211v0x1

52

2.86

0.86

10.4

5.7f

83

4.34

54

3.02

oai211v0x05 standard cell layout

oai211v0x05 schematicoai211v0x05

oai211v0x1 standard cell layout

oai211v0x1 schematicoai211v0x1