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Example Calculation of Power Strap Width with 6LM, Different Resistivities and Widths, 2W Core Power |
IR Drop
Derivations
Horizontal power straps are half the width (or twice the pitch) of vertical ones; metal resistivities are different; core power consumption is 2W with 32 core Vdd and 32 core Vss pads.
Step 1: Calculate Ipad and Vcore:
| Ipad = |
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| = | 2⁄(1.2×32) = 0.052A |
| Vcore = |
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| = | 1.14×(1−2×0.052×(0.025+0.025+0.1)⁄1.2 | ||||||
| = | 1.125V |
Step 2: Calculate the reference power supply conductance G:
| G = |
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| = | 7 ⁄ (4 × 0.07) = | 25 mhos |
Step 3 is to set out the values of kan, kwn, kcn and mn for each metal layer, and use these to calculate the value of L.
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| ¹78%=.07/.09; ²350%=.07/.02 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Normally we can't calculate L directly because its value depends on p which we don't know. But in this case with m1‑6=0 we can
| L = | kw1kc1(1-ps)(1-m1(1-ka2p)(1-ka3p))+ |
| kw2kc2(1-m2(1-ka2p)(1-ka3p))+ | |
| kw3kc3(1-m3(1-ka2p)(1-ka3p))+ | |
| kw4kc4(1-m4(1-ka2p)(1-ka3p))+ | |
| kw5kc5(1-m5(1-ka2p)(1-ka3p))+ | |
| kw6kc6(1-m6(1-ka2p)(1-ka3p)) | |
| = | ( 0.24 + 0.8 + 0.4 + 0.8 + 0.4 + 5.6 ) |
| = | 8.24 |
Step 4: Calculate the power strap allocation percentage p:
| p = |
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| = |
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| = | (1.403−0.173)×0.121 = 14.92% |
As shown on the right, a spreadsheet can be used to iterate to the answer.
If the designer sets the power strap pitch, then the supply allocation for each metal layer n is pitch×kan×p⁄2 and the supply width is pitch×kwn×p⁄2. An example is shown in the spreadsheet on the right where we have chosen a vertical power strap pitch of 250µm.
Step 5: Calculate the new core size. If the initial core size estimate without power straps is x, then with power straps the core size becomes x′
| x′ = | x | = | x | = | x | = x+12.70% |
| √(((1−ka2p)(1−ka3p)) | √(0.8508×0.9254) | 0.8873 |
The value 12.7% is called the IR Drop Adder.
This represents a more "normal" power busing scenario (but not necessarily a better one), where vertical power straps are preferred over horizontal ones. The extra use of metal-6 for power straps makes sense (a) because it is a long way from the transistors and so the impact on routing density should be less; and (b) because it is a thick metal layer with better conductivity.
Note the value of L=8.24 of which 5.6 comes from metal-6.
| Design Attribute | Value | ||||
|---|---|---|---|---|---|
| Pnom | core power consumption | 2W | |||
| ps | fraction of metal-1 in the standard cells used for power supplies | 22% (for vsclib) | |||
| r1 | resistivity of metal layer 1 in ohms per square | 0.09Ω per sq. | |||
| r2-5 | resistivity of metal layers 2-5 in ohms per square | 0.07Ω per sq. | |||
| r6 | resistivity of metal layer 6 in ohms per square | 0.02Ω per sq. | |||
| ka1,3,5 |
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50% | |||
| ka4 |
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100% | |||
| ka6 |
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200% | |||
| mn | percentage of metal layer n blocked to power straps | 0% | |||
| Vdd | the nominal supply voltage | 1.2V | |||
| Vddmin | the minimum supply voltage, 5% less than nominal | 1.14V | |||
| Vmin | the desired voltage at the centre of the die, 10% less than the nominal | 1.08V | |||
| Npad | number of core Vdd or core Vss power pads | 32 | |||
| Rpkg | the resistance of the package leadframe | 25mΩ | |||
| Rbond | the resistance of the bond wire | 25mΩ | |||
| Rpad | the resistance of the bond pad | 100mΩ | |||
| kcn = |
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